Enhancing charge transport in copper phthalocyanine thin film by elevating pressure of deposition chamber |
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| Affiliation: | 1. Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China;2. School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;1. R&D Center for Science and Engineering, JEC Group of Colleges, Jaipur Engineering College Campus, Kukas, Jaipur 303101, Rajasthan, India;2. Department of Physics, JNV University, Jodhpur, India;3. Defence Laboratory, Jodhpur 342011, India;4. Department of Chemistry, Indian Institute of Technology, Indore 452017, MP, India;1. Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong Special Administrative Region;2. Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, PR China;1. Department of Physics & Meteorology, Indian Institute of Technology, Kharagpur 721301, India;2. Department of Physics, National Institute of Technology, Agartala 799055, India;3. Department of Biotechnology, Indian Institute of Technology, Kharagpur 721302, India;1. Plasma Coating Research Group, Korea Institute of Materials Science (KIMS), 797, Changwondaero, Changwon, Gyeongnam 641-831, Republic of Korea;2. Advanced Characterization & Analysis Research Group, Korea Institute of Materials Science (KIMS), 797, Changwondaero, Changwon, Gyeongnam 641-831, Republic of Korea;3. Department of Chemistry, Pukyong National University, 45, Yongso-ro, Nam-Gu, Busan 608-737, Republic of Korea;4. Department of Flexible and Printable Electronics, Chonbuk National University, 567, Baekje-Daero, Deokjin-Gu, Jeonju 561-756, Republic of Korea |
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| Abstract: | Copper phthalocyanine (CuPc)-based thin film transistors were fabricated using CuPc films grown under different deposition pressure (Pdep) (ranging from 1.8 × 10?4 Pa to 1.0 × 10?1 Pa). The transistor performance highly depended on Pdep. A field-effect mobility of 2.1 × 10?2 cm2/(V s) was achieved under 1.0 × 10?1 Pa. Detailed investigations revealed that Pdep modulates the molecular packing and orientation of the organic films grown on a SiO2/Si substrate and influences the charge transport. Furthermore, from a device physics point of view, contact resistance of the fabricated transistors decreased when Pdep increased, which was beneficial in reducing energy consumption. |
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| Keywords: | OTFT CuPc Deposition pressure Molecular orientation |
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