Effective mobility in amorphous organic transistors: Influence of the width of the density of states |
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| Affiliation: | 1. Department of Chemistry, College of Science, Shantou University, Shantou, Guangdong 515063, PR China;2. Institute of New Energy Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Science (CAS), Ningbo, Zhejiang 315201, PR China;1. Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milan, Italy;2. Dipartimento di Fisica, Politecnico di Milano, P.zza L. da Vinci 32, 20133 Milan, Italy;1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, China;2. Institute of Theoretical Physics, Technische Universität Dresden, 01062 Dresden, Germany;3. School of Physics, Shandong University, Jinan 250100, China |
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| Abstract: | The temperature dependence of poly(3-hexylthiophene-2,5-diyl) (P3HT)/polystyrene (PS) blend organic transistor current/voltage (I–V) characteristics has been experimentally and theoretically studied. The planar transistors, realized by drop casting the P3HT/PS ink, exhibit high mobilities (over 5 × 10?3 cm2 V?1 s?1) and good overall characteristics. A transistor model accounting for transport mechanisms in disordered organic materials was used to fit the measured characteristics. Using a single set of parameters, the measured effective mobility versus gate bias, either increasing or decreasing with the gate bias depending on temperature, is well reproduced over a wide temperature range (130–343 K). A Gaussian density of states width of 0.045 eV was determined for this P3HT/PS blend. The transistor I–V characteristics are very well described considering disordered material properties within a self-consistent transistor model. |
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| Keywords: | Organic Thin Film Transistor (OTFT) Modeling Transport Amorphous semiconductor Temperature |
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