Improved performance of polymer photodetectors using indium–tin-oxide modified by phosphonic acid-based self-assembled monolayer treatment |
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Affiliation: | 1. School of Chemical Engineering and Material Science, Chung-Ang University, Seoul 156-756, Republic of Korea;2. School of Materials Science & Engineering and Engineering Research Institute (ERI), Gyeongsang National University, Jinju 660-701, Republic of Korea;3. Department of Chemistry and ERI, Gyeongsang National University, Jinju 660-701, Republic of Korea;1. R&D Center for Science and Engineering, JEC Group of Colleges, Jaipur Engineering College Campus, Kukas, Jaipur 303101, Rajasthan, India;2. Department of Physics, JNV University, Jodhpur, India;3. Defence Laboratory, Jodhpur 342011, India;4. Department of Chemistry, Indian Institute of Technology, Indore 452017, MP, India;1. Department of Nanobiomedical Science & WCU Research Center, Dankook University Graduate School, Chenan-si, Chungnam 330-714, Republic of Korea;2. Department of Polymer Science and Engineering, Dankook University, 126, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi-do 448-701, Republic of Korea;1. Izmir Katip Celebi University, Faculty of Engineering, Department of Engineering Sciences, Çiğli, Izmir, Turkey;2. Toros University, Faculty of Engineering, Electric & Electronic Department, Mersin, Turkey;3. Izmir Institute of Technology, Material Science and Engineering, Izmir, Turkey;4. Izmir Katip Celebi University, Faculty of Engineering, Department of Material Science and Engineering, Çiğli, Izmir, Turkey;5. Ege University, Solar Energy Institute, Izmir, Turkey;1. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, South Korea;2. Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, ROC |
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Abstract: | For organic photodetectors (OPDs), in order to realize high incident-photon-to-current conversion efficiency (IPCE) and high on/off ratio, the characteristics of hole-only devices and polymer photodetectors with indium–tin-oxide (ITO) modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. 1H,1H,2H,2H-Perfluorooctanephosphonic acid (FOPA) treatment results not only in lowering of the injection barrier at the ITO/organic layer interface but also in the lowering of the contact resistance between ITO and the organic layer. An OPD based on a blend of a donor, poly(9,9-dioctylfluorene-co-bithiophene) (F8T2), and an acceptor, fullerene derivative 6-6]phenyl-C61-butyric acid methyl ester (PCBM) with FOPA treatment exhibits blue-light sensitivity and IPCE of approximately 75% at −4 V. For the F8T2:PCBM device with FOPA, the IPCE is improved, and the dark current hardly increases. F8T2:PCBM device with FOPA treatment exhibits high on/off ratio, wide detector dynamic range and cut-off frequency of more than 10 MHz under reverse voltage. |
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Keywords: | Organic photodetectors Self-assembled monolayer Conjugated polymers Fullerene High sensitivity High on/off ratio |
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