Solution-processed single-crystalline organic transistors on patterned ultrathin gate insulators |
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| Affiliation: | 1. Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Chiba, Japan;2. Department of Applied Physics, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Osaka, Japan;3. Organic Materials and Devices, Institute of Polymer Materials, Department of Materials Science, Friedrich-Alexander-University of Erlangen-Nürnberg, Martensstraße 7, 91058 Erlangen, Germany;4. PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;5. Emergent Materials Department, Advanced Science Institute, RIKEN, Wako, Saitama 351-0198, Japan;1. Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan;2. Central Research Center, Toppan Forms Co. Ltd., 1-2-6 Owada-Cho, Hachioji, Tokyo 192-0045, Japan;1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba 305-8562, Japan;2. Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;1. Institute for Microelectronics Stuttgart (IMS CHIPS), 70569 Stuttgart, Germany;2. Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany |
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| Abstract: | Single-crystalline organic transistors of 3,11-didecyl-dinaphtho2,3-d:2′,3′-d′]benzo1,2-b:4,5-b′]dithiophene (C10-DNBDT-NW) and 2,9-didecyl-dinaphtho2,3-b:2′,3′-f]thieno3,2-b]thiophene (C10-DNTT) were fabricated by solution processes on top of the patterned hybrid ultrathin gate dielectrics consisting of 3.6 nm-thick aluminum oxide and self-assembled monolayers (SAMs). Due to the excellent crystallinity of the channel films, bottom-gate and top-contact field-effect transistors exhibited the average field-effect mobility of 3.7 cm2/V s and 4.3 cm2/V s for C10-DNBDT-NW and C10-DNTT, respectively. These are the first successful devices of solution-processed single-crystalline transistors on ultrathin gate dielectrics with the mobility above 1 cm2/V s, opening the way to develop low-power-consumption and high-performance printed circuits. |
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| Keywords: | Organic transistor Single crystal Self-assembly monolayer Hybrid Dielectrics Solution process |
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