Oriented growth of A2Te3 (A = Sb, Bi) films and their devices with enhanced thermoelectric performance

Oriented thermoelectric (TE) p-Sb₂Te₃ and n-Bi₂Te₃ thin films with special nanostructures have been synthesized by a simple vacuum thermal evaporation technique. The composition and microstructure of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), presenting a well preferential crystal growth with dense slender columnar grains grown perpendicular to the substrate, and energy dispersive X-ray spectrum (EDX) indicating the compositions distribution in the films. The electric transport properties, i.e., conductivity and Seebeck coefficient, and the thermal transportation of the oriented films show optimized properties. Prototype devices were built up by p and n elements in series and parallel circuits. The largest output power and cooling could be achieved in Sb₂Te₃ parallel device with P_max = 6.51 μW at ΔT = 106 K, and cooling of 4.1 K at 2 V. The 24-pair p-n couples series device could output maximum voltage of 313 mV at ΔT = 102 K. The power generation and the cooling of the devices show times enhanced TE performances than those consisting of common films. The results proved that introducing nanostructures into films is an effective choice to obtain high-efficient micro TE device.