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Nitridation Kinetics of Silicon Monocrystal and Morphology of Nitride Film
作者姓名:孙贵如  李立本  李文超  王俭  冯艳丽  李净
作者单位:General Research Institute for Non-ferrous Metals. Beijing China 100088,Institute of Semiconductor Material. Zhejiang University Zhejiang China 310027,University of Science and Technology. Beijing China 100083,University of Science and Technology. Beijing China 100083,University of Science and Technology. Beijing China 100083,University of Science and Technology. Beijing China 100083
摘    要:Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively,analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According tothe theory for kinetics of reaction of vapour with solid phase a nitridation kinetic model, from which it can beshown thal the rate of nitridation reaction of silicon crystal should be controlled by three stage limiting factors,was proposed. These limiting factors are chemical reaction, chemical reaction mixed with diffusion and diffu-sion. Using this model to treat our experimental data, satisfactory correlation coefficient and apparentactivation energy of nitridation of p-type (lll) silicon crystal have been obtained. The nitride film was identi'fied to be a-Si_3N_4 (Hexagonal, a=0.7758nm,c_o=0.5623nm) by X-ray diffraction analysis. Morphology ofthe nitride films formed in different nitridation duration was observed in both planar andcross-sectional viewsby SEM (scanning electron microscope).


Nitridation Kinetics of Silicon Monocrystal and Morphology of Nitride Film
Sun Guiru General Research Institute for Non-ferrous Metals,Beijing ,China Li Liben Institute of Semiconductor Material,Zhejiang University. Zhejiang ,China Li Wenchao,Wang Jian,Feng Yanli,Li Jing University of Science and Technology,Beijing ,China.Nitridation Kinetics of Silicon Monocrystal and Morphology of Nitride Film[J].Rare Metals,1993(1).
Authors:Sun Guiru General Research Institute for Non-ferrous Metals  Beijing  China Li Liben Institute of Semiconductor Material  Zhejiang University Zhejiang  China Li Wenchao  Wang Jian  Feng Yanli  Li Jing University of Science and Technology  Beijing  China
Affiliation:Sun Guiru General Research Institute for Non-ferrous Metals,Beijing 100088,China Li Liben Institute of Semiconductor Material,Zhejiang University. Zhejiang 310027,China Li Wenchao,Wang Jian,Feng Yanli,Li Jing University of Science and Technology,Beijing 100083,China
Abstract:
Keywords:Nitridation mechanism  Silicon monocrystal  Nitride film morphology
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