| CMOS运算放大器内部电路电离辐射损伤研究测试系统 |
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| 引用本文： | 郭旗,陆妩,任迪远,余学锋,张国强,范隆,严荣良. CMOS运算放大器内部电路电离辐射损伤研究测试系统[J]. 核技术, 2000, 23(9): 637-641 |
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| 作者姓名： | 郭旗 陆妩 任迪远 余学锋 张国强 范隆 严荣良 |
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| 作者单位： | 中国科学院新疆物理研究所乌鲁木齐 830011 |
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| 摘 要： | 为了从内部研究ＣＭＯＳ运算放大器的电离辐射损伤机理，用由计算机控制的运算放大器内部单元电路损伤测试系统测量运放电路整体性能参数在电离辐射环境中的变化，观察电路内部各功能单元电路和ＭＯＳＦＥＴ的辐照损伤特性；该系统能将不同功能单元电路的损伤对电路整体性能的影响进行测试。
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| 关 键 词： | 运算放大器 电离辐射损伤 测试 CMOS数字电路 |
| 修稿时间： | 1998-11-10 |
A rneasurenent system to detect the radiation damage inside CMOS operational anplifier |
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| GUO Qi,LU Wu,REN Diyuan,YU Xuefeng,ZHANG Guoqiang FAN Long,YAN Rongliang. A rneasurenent system to detect the radiation damage inside CMOS operational anplifier[J]. Nuclear Techniques, 2000, 23(9): 637-641 |
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| Authors: | GUO Qi LU Wu REN Diyuan YU Xuefeng ZHANG Guoqiang FAN Long YAN Rongliang |
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| Abstract: | A measurement system to detect the radiation damage inside CMOS operational amplifier was described in this paper. This system can observe the damage of functional sub-circuits in an operational amplifer while measuring the response of its characteristics, furthermore the various influence of the damage of each functional sub-circuits on the degradation of the whole circuit can be investigated using this system. |
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| Keywords: | Operational amplifier Ionizing irradiation Radiation damage Measurement |
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