Broadband infrared fluorescence in Er-doped BaO–SiO2 glasses |
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Authors: | Atsunobu Masuno Hiroyuki Inoue Yoshihiro Saito |
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Affiliation: | aInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;bSumitomo Electric Industries Ltd., 1 Taya-cho, Sakae, Yokohama 244-8588, Japan |
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Abstract: | Er3+-doped SiO2 glasses with or without BaO were fabricated by containerless processing. Scanning electron microscope observations and the scan profiles of electron-probe microanalysis demonstrated that the Ba-silicate glass was homogeneous and no aggregation of Er3+ ions occurred. The infrared fluorescence at around 1.55 μm from Er3+ in the Ba-silicate glass excited by a 980-nm laser was broader and its lifetime was longer than that of the silica glass, indicating the difference in the local structures around Er3+ ions between the Ba-silicate and silica glasses; this was supported by Raman scattering measurements. These results demonstrated that the Ba-silicate-glass system might be a new candidate for a host glass for Er3+-doped fiber amplifiers. |
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Keywords: | Containerless processing Silicate glass Er3+ Infrared fluorescence |
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