基于TSV转接板的3D SRAM单粒子多位翻转效应

为了研究硅通孔(TSV)转接板及重离子种类和能量对3D静态随机存储器(SRAM)单粒子多位翻转(MBU)效应的影响,建立了基于TSV转接板的2层堆叠3D封装SRAM模型,并选取6组相同线性能量传递(LET)值、不同能量的离子(¹¹B与^4He、²⁸Si与¹⁹F、⁵⁸Ni与²⁷Si、⁸⁶Kr与⁴⁰Ca、¹⁰⁷Ag与⁷⁴Ge、¹⁸¹Ta与¹³²Xe)进行蒙特卡洛仿真。结果表明,对于2层堆叠的TSV 3D封装SRAM,低能离子入射时,在Si路径下,下堆叠层SRAM多位翻转率比上堆叠层高,在TSV(Cu)路径下,下堆叠层SRAM多位翻转率比Si路径下更大;具有相同LET值的高能离子产生的影响较小。相比2D SRAM,在空间辐射环境中使用基于TSV转接板技术的3D封装SRAM时,需要进行更严格的评估。

Single Event Multiple Bit Upset Effect of 3D SRAM Based on TSV Interposer

In order to study the effects of the through silicon via(TSV)interposer and heavy ion species and energies on single event multiple bit upset(MBU)effect of 3 D static random access memory(SRAM),a two-die stacked 3 D package SRAM model based on the TSV interposer was constructed.Six groups of ions with the same linear energy transfer(LET)values and different energies(¹¹B and ⁴He,²⁸Si and ¹⁹F,⁵⁸Ni and ²⁷Si,⁸⁶Kr and ⁴⁰Ca,¹⁰⁷Ag and ⁷⁴Ge,¹⁸¹Ta and ¹³²Xe)were selected for Monte Carlo simulations.The results show that for the two-die stacked TSV 3 D package SRAM,when the low energy ions are incident,in the Si path,the MBU rate of the SRAM in the lower stack die is higher than that in the upper stack die;and in the TSV(Cu)path,the MBU rate of the SRAM in the lower stack die is higher than that in the Si die.The influence of high energy ions with the same LET value is less.Compared with 2 D SRAM,3 D package SRAM based on TSV interposer technology needs to be evaluated more strictly in space radiation environment.