一种应用于12 GHz的AlN多层陶瓷外壳

以AlN材料为陶瓷基材,采用陶瓷绝缘子的射频传输端口结构及陶瓷焊球阵列封装形式,结合多层陶瓷加工工艺,设计并制备了一款可封装多个芯片的X波段AlN陶瓷外壳。采用应力仿真软件对外壳进行结构设计,利用电磁仿真软件对该外壳的射频端口进行仿真优化。采用微带线直接穿墙形式,设计了共面波导-带状线-共面波导的射频传输结构,并与陶瓷外壳进行一体化设计和制作。利用GSG探针对外壳样品进行测试,实测结果表明,在0~12 GHz频段内,外壳射频端口的插入损耗不小于-0.5 dB,回波损耗不大于-15 dB,AlN一体化外壳尺寸为10.25 mm×16.25 mm×4 mm,可广泛应用于高频高速信号一体化封装领域。

An AlN Multilayer Ceramic Package for 12 GHz Application

An X-band AlN multi-chip ceramic package was designed and fabricated by using AlN material as the ceramic substrate,adopting the structure of RF transmission port of ceramic insulator and the package form of the ceramic ball grid array,and combining with the multilayer ceramic processing technology.The stress simulation software was used to design the package structure,and the electromagnetic simulation software was used to simulate and optimize the RF port of the package.The RF transmission structure of coplanar waveguide-stripline-coplanar waveguide was designed by using the microstrip line directly through the package,and it was integrated with the ceramic package.The GSG probe was used to test the package sample.The measured results show that the insertion loss of the package RF port is not less than-0.5 dB and the return loss is not more than-15 dB in the 0-12 GHz frequency band.The AlN integrated package size is 10.25 mm×16.25 mm×4 mm,which can be widely used in the field of high frequency and high speed signal integrated packaging.