| 基于MOSFET ZTC工作点的高阶曲率补偿电压基准 |
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| 引用本文： | 刘锡锋,王津飞,林婵,居水荣. 基于MOSFET ZTC工作点的高阶曲率补偿电压基准[J]. 半导体技术, 2021, 46(2): 117-123. DOI: 10.13290/j.cnki.bdtjs.2021.02.004 |
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| 作者姓名： | 刘锡锋 王津飞 林婵 居水荣 |
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| 作者单位： | 江苏信息职业技术学院微电子学院,江苏无锡214153;江苏省专用集成电路重点实验室,江苏南通226000;江苏信息职业技术学院微电子学院,江苏无锡214153 |
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| 基金项目： | 江苏省教育厅“青蓝工程”优秀教学团队资助项目(苏教师(2019)3号);江苏省专用集成电路设计重点实验室开放基金资助项目(2020KLOP004)。 |
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| 摘 要： | 工作在饱和区的MOSFET存在零温度系数(ZTC)特定工作点,基于这一特性设计实现了一款具有低温度系数的电压基准芯片。所设计的电路利用ZTC工作点的温度系数接近于0这一特点,辅以高阶曲率补偿电路,实现极低温度系数的输出电压。此外,针对ZTC工作点对工艺偏差的敏感性,根据蒙特卡洛仿真结果,专门设计了熔丝修调电路,以保证电路的输出结果具有较高工艺稳定性。该电路在CSMC 0.18μm CMOS工艺平台进行了流片验证,芯片面积为0.0025 mm2。结果表明该芯片在室温时能够稳定输出475.5 mV电压,在-40~125℃内,温度系数达到1.8×10-6/℃,在10 kHz时电源抑制比达到-68.7 dB。
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| 关 键 词： | 电压基准 MOSFET 零温度系数(ZTC) 曲率补偿 熔丝 修调电路 |
A High-Order Curvature Compensation Voltage Reference Based on MOSFET ZTC Operating Point |
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| Liu Xifeng,Wang Jinfei,Lin Chan,Ju Shuirong. A High-Order Curvature Compensation Voltage Reference Based on MOSFET ZTC Operating Point[J]. Semiconductor Technology, 2021, 46(2): 117-123. DOI: 10.13290/j.cnki.bdtjs.2021.02.004 |
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| Authors: | Liu Xifeng Wang Jinfei Lin Chan Ju Shuirong |
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| Affiliation: | (Department of Microelectronics,Jiangsu Vocational College of Information Technology,Wuxi 214153,China;Jiangsu Key Laboratory of ASIC,Nantong 226000,China) |
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| Abstract: | A voltage reference chip with low-temperature coefficient was designed based on the characteristic of the zero temperature coefficient(ZTC)specific operating point of the MOSFET working in the saturation region.Based on the advantage of the feature that the temperature coefficient of the ZTC operating point was close to zero,and supplemented by a high order curvature compensation circuit,an output voltage with extremely low-temperature coefficient was realized.In addition,in view of the sensitivity of the ZTC operating point to process deviation and according to the Monte Carlo simulation results,the fuse trimming circuit was specially designed to ensure a high process stability of the output result of the circuit.The proposed circuit was fabricated and verified with the CSMC 0.18μm CMOS process platform,and the chip area is 0.0025 mm2.The results show that the chip can stably output 475.5 mV voltage at room temperature,the temperature coefficient reaches 1.8×10-6/℃within-40-125℃,and the power supply rejection ratio reaches-68.7 dB at 10 kHz. |
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| Keywords: | voltage reference MOSFET zero temperature coefficient(ZTC) curvature compensation fuse trimming circuit |
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