超宽禁带半导体金刚石功率电子学研究的新进展

以SiC/GaN为代表的第三代半导体功率电子学已成为当今功率电子学创新发展的主流,超宽禁带半导体金刚石功率电子学将有可能成为下一代固态功率电子学的代表,受到研究人员的广泛关注。介绍了金刚石功率电子学的最新进展,如金刚石单晶、金刚石化学气相沉积同质和异质单晶外延、金刚石多晶外延、金刚石二极管、金刚石MOSFET、金刚石结型场效应晶体管、金刚石双极结型晶体管、金刚石逻辑电路、金刚石射频场效应晶体管和金刚石上GaN HEMT等。还介绍了金刚石材料的大尺寸、低缺陷和p型及n型掺杂等制备技术,金刚石新器件结构设计,金刚石新器件工艺,转移掺杂H端-金刚石沟道和金刚石/GaN界面热阻等研究成果。分析了金刚石功率电子学的发展由来、关键技术突破和发展态势。

New Research Progress in Ultra Wide Bandgap Semiconductor Diamond Power Electronics

The third generation of semiconductor power electronics represented by SiC/GaN has become the mainstream of innovation and development of power electronics.Ultra wide bandgap semiconductor diamond power electronics will probably become the representative of the next generation of solid-state power electronics,and will be widely concerned by researchers.The latest developments of diamond power electronics are introduced,such as diamond single crystal,diamond chemical vapor deposition homogeneous and heterogeneous epitaxial single crystal,polycrystalline diamond epitaxial,diamond diode,diamond MOSFET,diamond junction field-effect transistor,diamond bipolar junction transistor,diamond logic circuit,diamond RF field-effect transistor and GaN-on-diamond HEMT,and so on.The research results are also introduced,including the preparation technologies of the large size,low defect diamond material and p-type and n-type doping,the structure design of the diamond new device,the process technology of the diamond new device,transfer of doping H-diamond channel and diamond/GaN interface thermal resistance.The development origin,key technology breakthrough and development trend of diamond power electronics are analyzed.