一种考虑端口引线趋肤效应的GaAs PHEMT器件小信号模型

为了精确地表征高频GaAs赝配高电子迁移率晶体管(PHEMT)的器件特性,提出了一种考虑端口引线趋肤效应的GaAs PHEMT器件小信号模型。采用传输线理论,建立GaAs PHEMT的源-漏电压为0 V情况下沟道的T型等效网络。以量化沟道电阻为中间项,推导出含有趋肤效应模型的拓扑结构并提出参数解析提取方法。结合趋肤效应的高频响应特征,从频率高于40 GHz的测试S参数中剥离10 GHz以下的非本征参数,然后从剥离之后的网络参数中提取趋肤效应模型参数值。采用总栅宽为4×25μm GaAs PHEMT管芯用于模型和模型参数提取方法的验证。结果显示在2~110 GHz下,该模型的仿真结果与测试结果吻合较好。

A Small Signal Model of the GaAs PHEMTs Considering the Skin Effect of Port Leads

In order to accurately characterize the characteristics of high-frequency GaAs pseudomorphic high electron mobility transistor(PHEMT)devices,a small signal model of the GaAs PHEMT device considering the skin effect of port leads was proposed.Based on the transmission line theory,the T-type equivalent network of the GaAs PHEMTs channel was established at a source-drain voltage of 0 V.Taking the quantified channel resistance as the middle term,the topology structure containing the skin effect model was derived and the parameter analysis extraction method was proposed.Combined with the high-frequency response characteristics of the skin effect,extrinsic parameters below 10 GHz were stripped from the test S-parameters with frequencies above 40 GHz.A GaAs PHEMT die with a gate width of 4×25μm was used for model and verification of model parameter extraction method.The results show that the simulation results of this model are in good agreement with the test results at 2-110 GHz.