Origin of ZnO Varistor |
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| Authors: | Satoru Fujitsu Hiroshi Toyoda Hiroaki Yanagida |
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| Affiliation: | Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo Bunkyo-ku, Tokyo, 113 Japan |
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| Abstract: | The varistor properties were examined in porous ZnO. The sample used contained no dopants such as Bi2O3 or Pr6O11, which are usually considered to be useful in developing varistors. Comparison of I-V curves for the oxidized and unoxidized samples indicated that oxygen, which had chemisorbed and diffused into the grain boundary, played a role in developing varistor characteristics. |
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