采用金属镓层氮化技术在石英衬底上生长多晶GaN

随着多晶GaN材料发光研究的不断深入 ,大面积、价格低廉的多晶GaN基光电器件的研制已成为工业生产中一个重要的研究领域。石英玻璃以其自身特有的优势 ,成为生长多晶GaN材料的较为理想的衬底。本文采用一种新的金属镓层氮化技术 ,使用无定形石英作衬底 ,在常压下制备出多晶GaN。经分析测试表明 ,生长出的多晶GaN为六方结构且质量较好 ,并观察到针状的表面结构

Growth of Polycrystalline GaN on Silica Substrate via Ga Nitridation

A novel technology,named Ga nitridation,has been successfully developed to grow low cost,polycrystalline GaN films on silica substrates in atmosphere pressure.The GaN films were studied with X ray diffraction (XRD) and scanning electron spectroscopy (SEM).XRD spectra show that the polycrystalline GaN films are dominated by high quality grains with a hexagonal crystal structure.SEM micrographs reveal that the characteristic of the surface morphology is the high density,needle shaped crystal grains with a certain preferential crystal growth orientation.We suggest that Ga nitridation is a promising technology to grow large area,high quality,polycrystalline GaN films on silica substrates on industrial scale.