Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation |
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Authors: | D A Vinokurov V A Kapitonov A V Lyutetskiĭ N A Pikhtin S O Slipchenko Z N Sokolova A L Stankevich M A Khomylev V V Shamakhov K S Borshchev I N Arsent’ev I S Tarasov |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) Voronezh State University, Voronezh, 394006, Russia |
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Abstract: | Spectral and light-current characteristics of separate-confinement lasers that are based on InAl-GaAs/InP and InGaAsP/InP alloys and emit in the wavelength range of 1.5–1.8 μm are studied at high excitation levels (up to 80 kA/cm2) in pulse operation (100 ns, 10 kHz). It is shown that the peak intensity in the stimulated-emission spectrum saturates as the pump current is increased. Further increase in the emitted power is attained owing to the emission-spectrum broadening to shorter wavelengths, similar to lasers on the GaAs substrates (λ = 1.04 μm). It is established experimentally that the broadening of the stimulated-emission spectrum to shorter wavelengths is caused by an increase in the threshold current and by an increase in the charge-carrier concentration in the active region. This concentration increases by a factor of 6–7 beyond the lasing threshold and can be as high as 1019 cm?3 in pulse operation. It is shown that saturation of the light-current characteristics in pulse operation takes place in the InAlGaAs/InP and InGaAsP/InP lasers as the pump current is increased. It is shown experimentally that there is a correlation between saturation of the light-current characteristic and an increase in the threshold current in the active region. An increase in the charge-carrier concentration and gradual filling of the active region and waveguide layers with electrons are observed as the pump current is increased; stimulated emission from the waveguide is observed at high pump currents. |
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Keywords: | 42 55 Px 78 45 Th 63 40 Kr |
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