Hysteresis in transfer characteristics in 4H-SiCdepletion/accumulation-mode MOSFETs |
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Authors: | Chatty K Banerjee S Chow TP Gutmann RJ |
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Affiliation: | Rensselaer Polytech. Inst., Troy, NY; |
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Abstract: | Hysteresis in room-temperature transfer characteristics between forward (pinch-off voltage, VP=-15 V) and reverse gate voltage sweeps (VP=7 V) in n-channel depletion/accumulation-mode 4H-SiC MOSFETs is reported. Transfer characteristics exhibit a parallel shift toward negative voltages depending,on the starting gate voltage and direction of the sweep. The hysteresis and shift in transfer characteristics are related to changes in effective fixed-oxide charge resulting from changes in interface trap occupancy. Interface trap occupancy changes depending on the magnitude of the starting gate voltage and the direction of gate-voltage sweep. At high temperatures, the hysteresis between forward and reverse gate voltage sweep decreases |
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