Investigation of temperature-dependent characteristics of ann+-InGaAs/n-GaAs composite doped channel HFET |
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| Authors: | Wen-Chau Liu Kuo-Hui Yu Rong-Chau Liu Kun-Wei Lin Kuan-Po Lin Chih-Hung Yen Chin-Chuan Cheng Kong-Beng Thei |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Thinan; |
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| Abstract: | The temperature-dependent characteristics of an n+-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor (HFET) have been studied. Due to the reduction of leakage current and good carrier confinement in the n +-InGaAs/n-GaAs CDC structure, the degradation of device performances with increasing the temperature is insignificant. Experimentally, for a 1×100 μm2 device, the gate-drain breakdown voltage of 24.5 (22.0) V, turn-on voltage of 2.05 (1.70) V, off-state drain-source breakdown voltage of 24.4 (18.7) V, transconductance of 161 (138) mS/mm, output conductance of 0.60 (0.60) mS/mm, and voltage gain of 268 (230) are obtained at 300 (450) K, respectively. The shift of Vth from 300 to 450 K is only 13 mV. In addition, the studied device also shows good microwave performances with flat and. wide operation regime |
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