4H-SiC avalanche photodiode with multistep junction extensiontermination |
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| Authors: | Yan F. Luo Y. Zhao J.H. Bush M. Olsen G.H. Weiner M. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ; |
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| Abstract: | 4H-SiC avalanche photodiodes (APDs) are fabricated with a multistep junction termination extension. The leakage current density has been dramatically reduced to as low as 1 μA/cm2 and photo-responsivity up to 105 A/W has been achieved. The 4H-SiC APDs can run very stably at power densities up to 104 W/cm2 |
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