| Abstract: | Dry developable resists comprised of poly(methyl isopropenyl ketone) (PMIPK) and 4-methyl-2,6-dI-(4′-azldoben-zylidene)-cyclohexanone-1 gave excellent results in SK lithography, i. e., high aspect ratio resist patterns with vertical walls were easily obtained by maskless dry etching in the single layer resist process. Because of the simplicity of single layer resist processing and the high etch rate in maskless dry etching for the formation of thick resist patterns, the dry developable resist in SR lithography may be advantageous to the multilayer resist for the purpose of generating high resolution, thick resist patterns with vertical walls. The resolution limit of the dry developable resist which reproduces the designed dimensions was 100 nm line and 200 nm space when a conventional e-beam apparatus was used at 20 KV in the dry developable multilayer resist process. |
