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High resolution electron microscopy of partial dislocations in the Laves phase structure
Authors:Y. Kitano  M. Takata  Y. Komura
Abstract:A Mg-base Laves phase was investigated by high resolution electron microscopy (HREM). Linear defects found at terminations of stacking faults were classified into three groups. The first is a partial dislocation at a termination of a stacking fault, the second is a superposed partial dislocation which is defined as a defect produced by a superposition of terminations of two or more stacking faults lying on neighbouring layers, and the third is a combined linear defect which consists of a characteristic combination of terminations of stacking faults. In the last case the total stacking fault vector becomes equal to the translation vector in the basal plane, so that the defect needs no relaxation of the lattice. The Burgers vectors of the partial dislocations were estimated with the aid of modified Burgers circuits.
Keywords:Dislocation  crystal defect  high resolution electron microscopy  HREM  Mg-Cu-Zn alloys  intermetallic compound  Laves phase alloys
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