| 二氧化钒薄膜的制备及性能表征 |
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| 引用本文： | 赵萍,李立珺,张洋.二氧化钒薄膜的制备及性能表征[J].现代电子技术,2011,34(6):148-150. |
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| 作者姓名： | 赵萍 李立珺 张洋 |
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| 作者单位： | 1. 西安邮电学院电子工程学院,陕西,西安,710121
2. 香港科技大学工学院,香港九龙 |
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| 基金项目： | 国家自然科学基金资助项目，陕西省教育厅资助项目 |
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| 摘 要： | 通过激光脉冲沉积法，分别在Csapphire和R—sapphire衬底上制备了单相二氧化钒（VO2）薄膜。用x射线衍射法表征了不同实验条件下制备的二氧化钒薄膜的结构性质，分析表明在600℃，10^-2torr的氧气分压下，生长15min可得到单相的二氧化钒（VO2）薄膜；重点研究了激光能量对薄膜电学性质的影响，实验结果表明激光能量在500-600MJ对制备的二氧化钒薄膜具有最好的电学性质。
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| 关 键 词： | 脉冲激光沉积 二氧化钒 薄膜 x射线衍射 电学性质 |
Synthesis and Characterization of VO2 Thin Films |
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| ZHAO Ping,LI Li-jun,ZHANG Yang.Synthesis and Characterization of VO2 Thin Films[J].Modern Electronic Technique,2011,34(6):148-150. |
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| Authors: | ZHAO Ping LI Li-jun ZHANG Yang |
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| Affiliation: | ZHAO Ping1,LI Li-jun1,ZHANG Yang2(1.School of Electronic Engineering,Xi'an University of Posts and Telecommunications,Xi'an 710121,China,2.School of Engineering,Hongkong University of Science and Technology) |
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| Abstract: | Single-phase VO2 thin films were synthesized via pulsed laser deposition method on C sapphire and R sapphire substrates. The structure properties of VO2 thin films under different experimental conditions were characterized by X-ray dif fraction. The results show that single-phase VO2 thin film can be prepared in 15 minutes, at 600℃, 10^-2 torr pressure of ox ygen. The laser energy impacts on electrical properties of VO2 thin films are discussed. Experimental results show that the VO2 thin films prepared at the laser energy of 500-600 MJ has the best electrical properties. |
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| Keywords: | pulsed laser deposition VO2 thin films XRD electrical properties |
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