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| 一种能改善GaAsHBT自热效应的复合管 | |
| 引用本文： | 朱向伟,胡善文,梁聪,张晓东,高怀. 一种能改善GaAsHBT自热效应的复合管[J]. 现代电子技术, 2011, 34(2): 145-147,150 |
| 作者姓名： | 朱向伟 胡善文 梁聪 张晓东 高怀 |
| 作者单位： | 1. 东南大学苏州研究院高频高功率器件与集成技术研究中心,江苏苏州,215123 2. 东南大学国家ASIC系统工程技术研究中心,江苏南京,210096 3. 苏州工业园区教育投资发展有限公司&苏州英诺迅科技有限公司射频功率器件及电路技术中心,江苏苏州,215123 |
| 摘 要： | 根据负反馈原理，提出一种复合管结构来补偿异质结双极型晶体管（HBT）的自热效应。仿真和测试曲线结果表明，在较宽环境温度和较大输出电流密度范围内，复合管的自热效应得到了有效抑制，静态工作点稳定，采用此复合管设计的功率放大器的1dB提高了2dB，线性得到了改善。 |
| 关 键 词： | HBT 直流偏置 自热效应 线性度 |
Composite Transistors for Improving GaAs HBT's Self-heating Effect |
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| ZHU Xiang-wei,HU Shan-wen,LIANG Cong,ZHANG Xiao-dong,GAO Huai. Composite Transistors for Improving GaAs HBT's Self-heating Effect[J]. Modern Electronic Technique, 2011, 34(2): 145-147,150 | |
| Authors: | ZHU Xiang-wei HU Shan-wen LIANG Cong ZHANG Xiao-dong GAO Huai |
| Affiliation: | 1.High Frequency & High Power Device and Integrated Technology Research Center,Research Institute of Southeast University at Suzhou,Suzhou 215123,China;2.National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China;3.Joint RF Power Device & Circuit Technology Center,Suzhou SIP Education Development and InvestmentCo.Ltd & Suzhou Innotion Tech.Co.Ltd.,Suzhou 215123,China) |
| Abstract: | A composite transistor design is proposed to compensate GaInP/GaAs heterojunction bipolar transistor＇s （HBT＇s） self-heating problem based on negative feedback technique. The proposed design produced some matching results in simulation and measurement. In the broad ambient temperature and output current density range, the self-heating effect of composite transistor was restrained, a more stable DC biasing point was achieved. The uses of such composite transistor can significantly improve the design of power amplifiers and its linearity is an important specification. |
| Keywords: | HBT |
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