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高速低功耗电流型灵敏放大器的设计
引用本文:朱婷,夏建新,蒋见花.高速低功耗电流型灵敏放大器的设计[J].现代电子技术,2011,34(2):157-160.
作者姓名:朱婷  夏建新  蒋见花
作者单位:1. 电子科技大学微电子与固体电子学院,四川成都,610054;中国科学院微电子研究所,北京,100029
2. 电子科技大学微电子与固体电子学院,四川成都,610054
3. 中国科学院微电子研究所,北京,100029
基金项目:国家自然科学基金资助项目
摘    要:提出了一款适合在低电压、大容量SRAM中应用的高速低功耗电流型灵敏放大器。该电路在交叉耦合反相器之间添加了一对隔离管,有效消除了大量位线寄生电容所带来的负面影响,从而极大提高了灵敏放大器的速度。同时,通过对时序控制电路的优化,有效降低了放大器的功耗。采用SMIC0.13μm数字工艺在HSpice下进行仿真,结果表明:在室温,1.2V工作电压下,灵敏放大器的放大延迟仅为0.344ns,功耗为102μw。相比文献中提出的电流型灵敏放大器,速度分别提高了9.47%和31.2%,功耗则降低了64.8%与63%。

关 键 词:电流型灵敏放大器  交叉耦合反相器  隔离管  时序控制电路

Design of High-speed and Low-power Current-mode Sense Amplifier
ZHU Ting,XIA Jian-xin,JIANG Jian-hua.Design of High-speed and Low-power Current-mode Sense Amplifier[J].Modern Electronic Technique,2011,34(2):157-160.
Authors:ZHU Ting  XIA Jian-xin  JIANG Jian-hua
Affiliation:1.School of Microelectronics and Solid-state Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China;2.Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Abstract:A high-speed and low-power current-mode sense amplifier for low-voltage and high capacitance SRAM applica- tion is presented. This circuit availably eliminated the negative effect of plentiful bit-line parasitical capacitance by adding a pair of separate transistors among the cross-coupled inverters, which extensively improved the speed of the sense amplifier. Meanwhile the sense amplifier effectively saved the power consumption by optimizing the timing control circuit. Simulation re- suits based on a SMIC 0. 13μm digital technology verify that the sensing delay of the sense amplifier is only 0. 344 ns and the power consumption is 102 μw at room temperature and 1.2V supply voltage. Compared with the listed literatures, the sensing delay of the proposed design has 9. 47% and 31.20% improvement respectively and the power consumption has 64. 8% and 63% improvement respectively.
Keywords:current-mode sense amplifier  cross-coupled inverters  separate transistors  timing control circuit
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