| 多孔硅场致电子发射 |
| |
| 引用本文： | 丁邦建,王维彪. 多孔硅场致电子发射[J]. 液晶与显示, 2000, 15(4): 268-272 |
| |
| 作者姓名： | 丁邦建 王维彪 |
| |
| 作者单位： | 1. 镇江高等专科学校，江苏镇江 212003
2. 中国科学院长春光学精密机械与物理研究所，吉林长春 130021 |
| |
| 基金项目： | 国家自然科学基金资助(56972034) |
| |
| 摘 要： | 研究了多孔硅冷阴极的场致电子发射特性，实验表明采用电化学阳极腐蚀、氧化、蒸电极等工艺可以制备一种平面薄膜型多孔硅冷阴极。在超高真空环境下测量了多孔硅冷阴极的电子发射特性。
|
| 关 键 词： | 多孔硅 冷阴极 场致电子发射 多孔硅场发射器件 |
| 文章编号： | 1007-2780(2000)04-0268-05 |
| 修稿时间： | 2000-10-08 |
Field Emission of Porous Silicon |
| |
| DING Bang jian ,WANG Wei biao. Field Emission of Porous Silicon[J]. Chinese Journal of Liquid Crystals and Displays, 2000, 15(4): 268-272 |
| |
| Authors: | DING Bang jian WANG Wei biao |
| |
| Affiliation: | DING Bang jian 1,WANG Wei biao 2 |
| |
| Abstract: | The field emission performances of porous silicon were studied. Porous silicon was fabricated by anodization technology. Cold cathode of porous silicon was fabricated by oxidization and deposited with nano Au thin film. The results show that porous silicon cold cathode has better field emission performances and can be used in field emission display technology. |
| |
| Keywords: | porous silicon field emission cold cathode |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
