| Abstract: | A multiplexer operating at up to 12 Gb/s has been demonstrated using a simple, but optimized, silicon bipolar technology with 2 μm lithography. Using this simple but optimized technology, a 12 Gb/s multiplexer was implemented. Circuit simulations predict the increase of the bit rate up to at least 15 Gb/s by changing to the 1.5 μm lithography. The results of experimental investigations and circuit simulations show that low-cost silicon-based bipolar circuits will be available for future optical-fiber transmission systems with data rates higher than 10 Gb/s |
