Partial dislocations and stacking faults in 4H-SiC PiN diodes |
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Authors: | M E Twigg R E Stahlbush M Fatemi S D Arthur J B Fedison J B Tucker S Wang |
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Affiliation: | (1) Electronics Science and Technology Division, Naval Research Laboratory, 20375 Washington, DC;(2) General Electric Corporation Research and Development Center, 12309 Niskayuna, NY;(3) Owens-Corning Corporation, 06810 Danbury, CT |
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Abstract: | Using plan-view transmission electron microscopy (TEM), we have identified stacking faults (SFs) in 4H-SiC PiN diodes subjected
to both light and heavy electrical bias. Our observations suggest that the widely expanded SFs seen after heavy bias are faulted
dislocation loops that have expanded in response to strain of the 4H-SiC film, while faulted screw or 60° threading dislocations
do not give rise to widely expanded SFs. Theoretical calculations show that the expansion of SFs depends on the Peach-Koehler
(PK) forces on the partial dislocations bounding the SFs, indicating that strain plays a critical role in SF expansion. |
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Keywords: | Silicon carbide PiN diode transmission electron microscopy stacking faults dislocations |
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