| SiN_x:Tb~(3+)薄膜中Tb~(3+)与银表面等离激元耦合 |
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| 引用本文： | 任常瑞,胡翔,李东升,杨德仁.SiN_x:Tb~(3+)薄膜中Tb~(3+)与银表面等离激元耦合[J].材料科学与工程学报,2009(1). |
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| 作者姓名： | 任常瑞 胡翔 李东升 杨德仁 |
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| 作者单位： | 浙江大学硅材料国家重点实验室;浙江大学材料科学与工程系; |
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| 基金项目： | 自然科学基金资助项目60606001;;“973计划”资助项目(2007CB613403);;教育部“长江学者和创新团队发展计划资助”项目(IRT0651) |
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| 摘 要： | 本文采用PECVD方法在石英衬底上生长不同剂量比的氮化硅薄膜SiNx,并利用离子注入方法在SiNx中注入Tb3+离子。然后通过在SiNx薄膜表面沉积银岛膜,研究了银表面等离激元和SiNx:Tb3+发光的相互作用。研究发现,银岛膜的存在降低了SiNx:Tb3+发光荧光寿命,而且SiNx:Tb3+发光荧光寿命随着银岛膜厚度的增加而减小。而氮化硅薄膜中的硅纳米晶也会影响Tb3+的光模密度,并对SiNx:Tb3+发光荧光寿命产生影响。
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| 关 键 词： | SiNx:Tb3+薄膜 银岛膜 衰减时间 表面等离激元 |
Luminescence of SiN_x:Tb~(3+) Film and its Coupling with Silver Mediated Surface Plasmon Polaritons |
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| REN Chang-rui,HU Xiang,LI Dong-sheng,YANG De-ren.Luminescence of SiN_x:Tb~(3+) Film and its Coupling with Silver Mediated Surface Plasmon Polaritons[J].Journal of Materials Science and Engineering,2009(1). |
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| Authors: | REN Chang-rui HU Xiang LI Dong-sheng YANG De-ren |
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| Affiliation: | State Key Laboratory of Silicon Materials and department of material science and engineering;Zhejiang University;Hangzhou 310027;China |
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| Abstract: | A non-stoichiometric silicon nitride(SiN_x) film was deposited by plasma-enhanced chemical vapor deposition(PECVD).The Tb~(3+) ions were implanted into the SiN_x films.Luminescence of SiN_x:Tb~(3+) film and its coupling with surface plasmon polaritons(SPP) was investigated by deposited silver island film on the top of SiN_x:Tb~(3+) film.It was found that the SPP mediated by silver island film decreased the emission decay time of Tb~(3+) ions.And decay time of Tb~(3+) ions decreased with the increase of the ... |
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