Avalanche region width in various structures of IMPATT diodes |
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Abstract: | The avalanche region of one-sided and two-sided abrupt junctions has been studied. These are the structures most commonly utilized for IMPATT diodes. Numerical results are presented which show that n+-p Si diodes have much narrower avalanche regions, due to the unequal ionization rates in Si, than the complementary p+-n type. The implications of these results with respect to IMPATT diode design are discussed. |
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