| LTE/WiMAX片上变压器的分析与设计 |
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| 引用本文： | 张华斌,蔡敏,武海军,李正平.LTE/WiMAX片上变压器的分析与设计[J].电子科技大学学报（自然科学版）,2014,43(3):363-368. |
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| 作者姓名： | 张华斌 蔡敏 武海军 李正平 |
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| 作者单位： | 1.华南理工大学电子与信息学院 广州 510640; |
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| 基金项目： | 国家863计划(2009AA01Z260); 广东省科技计划项目(2010A090601001) |
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| 摘 要： | 针对TSMC 0.13m RF CMOS射频和混合信号工艺器件库中无变压器器件，而变压器器件是设计射频通信电路的关键，该器件的有无直接影响射频通信前端电路性能的优劣. 通过对多种片上变压器的性能研究，设计出应用于LTE/WiMAX的八边形片上变压器，给出了与频率无关的集总元器件等效电路模型及模型参数提取公式，并对新器件进行了流片，测试结果表明在0.1~10GHz频率范围内L、Q参数具有良好的吻合性，且耦合系数K良好，达到设计目的. 该变压器的设计成功将有助于4G通信芯片的开发和应用.
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| 关 键 词： | LTE/WiMAX 集总参数模型 八边形 片上变压器 射频 |
| 收稿时间： | 2013-02-20 |
Analysis and Design of On-Chip Transformers for LTE/WiMAX |
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| Affiliation: | 1.School of Electronic and Information Engineering,South China University of Technology Guangzhou 510640;2.Zhongshan Institute,University of Electronic Science and Technology of China Zhongshan Guangdong 528402;3.Guangzhou Runxin Information Technology Co.,Ltd Guangzhou 510663 |
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| Abstract: | Transformer is a key device in radio frequency communication circuit, which can directly effect on the performance of the RF front-end circuit. However, there is not transformer in TSMC 0.13m RF CMOS mixed-signal process library. In order to solve this problem, an octagonal transformer which is applied in LTE/WiMAX is designed and fabricated by the analysis of all kinds of on-chip transformer performance, and the frequency-independent lumped-element equivalent circuit model and the parameter-extracted expressions are given. The measurement results show that L and Q have excellent agreement with the measured data from the frequency range of 0.1GHz to 10GHz, and coupling coefficient K is perfect. The successful design of the transformer will contribute to the development and application of 4G communication chips. |
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