A 10-MHz SOI-Based Face Shear Square Micromechanical Resonator

A 10-MHz face shear (FS) square micromechanical resonator based on silicon-on-insulator (SOI) technology is presented in this paper. In order to examine the improvement of quality factor as well as motional resistance Rx in this structure, the center-stem anchor is employed in this study. The benefit of anchoring the square in the center, which is the nodal point, is that the energy losses through the anchor can be minimized. Hence, a quality factor value of 2.0 million and the motional resistance of 8.2 kΩ can be obtained with an FS mode resonator via finite element (FE) simulation. The results show the significance of the FS mode in this design, not only in its structure but also in its square-extensional mode and Lame-mode. Additionally, an SOI-based fabrication process is proposed to support the design.