| 线性余因子差分法提取二极管参数 |
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| 引用本文： | 马晨月,张辰飞,王昊,何进,林信南,Mansun Chan. 线性余因子差分法提取二极管参数[J]. 半导体学报, 2010, 31(11): 114009-4 |
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| 作者姓名： | 马晨月 张辰飞 王昊 何进 林信南 Mansun Chan |
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| 摘 要： | 本文介绍了一个直接提取二极管参数的方法，线性余因子差分法（LCDO）。通过使用LCDO法，得到二极管的电压-电流特性曲线的极值，根据相应的极值位置可以直接提取二极管的特性参数。利用本方法，提取不同尺寸和温度的二极管的特性参数，如反向饱和电流，串联电阻和非理想因子。提取结果与实验数据吻合的很好。
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| 关 键 词： | 提取方法 线性 运算 极体 非理想因素 二极管 差分算子 辅助因子 |
Diode parameter extraction by a linear cofactor difference operation method |
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| Ma Chenyue,Zhang Chenfei,Wang Hao,He Jin,Lin Xinnan and Mansun Chan. Diode parameter extraction by a linear cofactor difference operation method[J]. Chinese Journal of Semiconductors, 2010, 31(11): 114009-4 |
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| Authors: | Ma Chenyue Zhang Chenfei Wang Hao He Jin Lin Xinnan Mansun Chan |
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| Affiliation: | Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China;Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China;Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China;Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China; Shenzhen SOC Key Laboratory of Peking University, PKU--HKUST Shenzhen Institute, Hi-Tech Industri;Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China; Shenzhen SOC Key Laboratory of Peking University, PKU--HKUST Shenzhen Institute, Hi-Tech Industri;Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China |
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| Abstract: | The linear cofactor difference operator (LCDO) method, a direct parameter extraction method for general diodes, is presented. With the developed LCDO method, the extreme spectral characteristic of the diode voltage--current curves is revealed, and its extreme positions are related to the diode characteristic parameters directly. The method is applied to diodes with different sizes and temperatures, and the related characteristic parameters, such as reverse saturation current, series resistance and non-ideality factor, are extracted directly. The extraction result shows good agreement with the experimental data. |
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| Keywords: | LCDO diode parameter extraction ideality factor series resistance |
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