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Photoelectric properties of p +-n junctions based on 4H-SiC ion-implanted with aluminum |
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| Authors: | G N Violina E V Kalinina G F Kholujanov G A Onushkin V G Kossov R R Yafaev A Hallén A O Konstantinov |
| Affiliation: | (1) St. Petersburg State University of Electrical Engineering, St. Petersburg, 197376, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(3) Elektron Optronik, St. Petersburg, 194223, Russia;(4) Department of Electronics, Royal Institute of Technology, Electrum 229, SE 164 40 Kista, Sweden;(5) ACREO AB, Electrum 236, SE 164 40 Kista, Sweden |
| Abstract: | The photoelectric properties of p +-n junctions that were based on 4H-SiC ion-implanted with aluminum and were formed in lightly doped n-type epitaxial layers grown by chemical vapor deposition were studied. It is shown that such photodetectors combine in full measure the advantages of photostructures formed on the basis of Schottky barriers and epitaxial p-n junctions. The results of the theoretical calculation of spectral characteristics of ion-implanted photodetectors are in good agreement with experimental data. The structures feature an efficiency of collection of nonequilibrium charge carriers close to 100% in the spectral range of the photon energies of 3.5–4.25 eV. |
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