A high f/sub OSC//f/sub T/ ratio VCO in SiGe BiCMOS technology |
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| Authors: | Zhan J-HC Duster JS Kornegay KT |
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| Affiliation: | Cornell Univ., Ithaca, NY, USA; |
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| Abstract: | A 37-GHz voltage controlled oscillator (VCO) fabricated in IBM's 47-GHz SiGe BiCMOS technology is presented. The VCO achieves a phase noise of -81dBc/Hz at 1-MHz offset from the carrier while delivering an output power of -30dBm to 50 /spl Omega/ buffers. Drawing 15-mA of dc current from a 3-V power supply the VCO occupies 350/spl mu/m/spl times/280/spl mu/m of silicon area. Capacitive emitter degeneration and compact layout are used to achieve high f/sub OSC//f/sub T/ ratio. |
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