Integrated-circuit reliability simulation with emphasis on hot-carrier effects

Reliability assurance and enhancement of analog VLSI circuits are of fundamental importance in the design of high quality signal processing and computing systems. An analog integrated circuit may fial due to degradation of some critical transistors. In this paper, strategies for use in a hierarchical reliability simulation environment covering various levels of VLSI circuit design are presented. Hot-carrier effects are used to demonstrate the prediction of degradation in circuit performance. This degradation information is propagated through the design hierarchy, with the data at each stage conforming with the complexity of representation at that stage. Circuit topology changes may be made at different levels to reduce the intensive electrical stress applied to weak components. At the top level the chip degradation information is essential for the design of reliable VLSI systems. The method used to include the first-order ac degradation effects into the circuit reliability simulator is described. Experimental results on inverters, precharging circuitry for sense amplifiers, and operational amplifiers designed in submicron technologies are presented.This research was partially supported by National Science Foundation under grant MIP-8710825 and by industrial grants from Samsung Electronics Co. and TRW Inc.