| 调制掺杂同型结对HB—LED工作电压的影响 |
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| 引用本文： | 文尚胜,范广涵,廖常俊,刘颂豪. 调制掺杂同型结对HB—LED工作电压的影响[J]. 量子电子学报, 2001, 18(3): 278-280 |
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| 作者姓名： | 文尚胜 范广涵 廖常俊 刘颂豪 |
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| 作者单位： | 1. 华南理工大学应用物理系,
2. 华南师范大学MOCVD实验室, |
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| 摘 要： | 根据电化学C－V测量AIGalnP外延片获得的载流子浓度深度分布数据，以及其LED外延片封装后的工作电压，计算了其中N^ －N与P^ －P两种同型结的接触电势差，指出调制掺杂同型结的掺杂浓度分布是影响LED 工作电压的另一大因素，并提出了进一步降低LED工作电压的有效措施。
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| 关 键 词： | 调制掺杂 同型结 接触电势差 高亮度发光二极管 工作电压 |
| 文章编号： | 1007-5461(2001)03-0278-03 |
| 收稿时间： | 2001-01-15 |
| 修稿时间： | 2001-01-15 |
Effect of the Modulated Doping on the Work Voltage of HB-LED |
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| Wen Shangsheng,,Fan Guanghsan,Liao Changjun,Liu Songhao. Effect of the Modulated Doping on the Work Voltage of HB-LED[J]. Chinese Journal of Quantum Electronics, 2001, 18(3): 278-280 |
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| Authors: | Wen Shangsheng Fan Guanghsan Liao Changjun Liu Songhao |
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| Affiliation: | Wen Shangsheng1,2,Fan Guanghsan2,Liao Changjun2,Liu Songhao2 |
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| Abstract: | Based on the results of AlGaInP LED samples measured by electro-chemical C-V profiler and their work voltages, we analyzed the contact-voltage difference from the homo-junctions, such as N+-N and P+-P junction, pointed out that the carrier density distribution of the modulated doping have a distinctive effect on the work voltage of HB-LED, and presented the method decreasing further HB-LED's work voltage. |
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| Keywords: | modulated doping homo-junction contact-voltage difference HB-LED |
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