Microstructural study of Au-Pd-Zn ohmic contacts to p-type InGaAsP-InP

A detailed microstructural study has been done on Au-Pd-Zn ohmic contacts to p-type InGaAsP epitaxially grown on InP. The doping level in the InGaAsP was 1.0 × 10¹⁹ to 1.5 × 10¹⁹ cm^–3 near the surface with the Zn concentration graded to a value of 7 × 10¹⁸ cm^–3 at the InGaAsP-InP interface. Metal layers (10 nm Pd,3 nmZn, 25 nm Pd and 50 nm Au) were deposited sequentially by electron beam evaporation. Contact resistances less than 10^–4 cm² were achieved for all annealing temperatures studied (380–440 C) and a minimum contact resistance of 2 × 10^–6 cm² was obtained for an anneal at 400 C for 20 s. Comparisons were made to similar metallizations on p-type InP. Lower contact resistances were achieved for the quaternary material compared with the binary material, however, contact stability and uniformity were worse.