The effect of the concentration of the majority charge carriers and irradiation intensity on the efficiency of radiation-defect production in <Emphasis Type="Italic">n</Emphasis>-Si crystals

The effect of the concentration of the majority charge carriers (n) and the electron-flux density (?) on the efficiency of radiation-defect production (η) in n-Si samples was studied. It is shown that the dependence η(?) features a maximum, which shifts to larger values of ? as n increases. This effect is explained by assuming that there is an optimal relation between the concentrations of primary defects produced per unit time and those of the free charge carriers, which charge these defects.