| 电阻率两种测试方法间几何效应修正的相关性 |
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| 引用本文： | 孙以材 范兆书. 电阻率两种测试方法间几何效应修正的相关性[J]. 半导体技术, 2000, 25(5): 38-41 |
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| 作者姓名： | 孙以材 范兆书 |
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| 作者单位： | 河北工业大学电气信息学院电子工程系!天津，300130(孙以材，范兆书，宁秋凤)，河北工业大学电气信息学院电子工程系!天津，300130，美国新墨西哥大学(孙新宇) |
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| 摘 要： | 根据有限厚度样品体电阻率和薄层电阻两种测试方法间的厚度修正系数的相关性，论证了其边缘效应修正系数具有一一对应的严格的相等性。通过实验予以证明，并可将这一结论应用于非圆心点测试。
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| 关 键 词： | 电阻率测量 几何效应修正 半导体材料 测试 |
Relationship Between Geometric Effect Correction on Resistivity Measurement Methods |
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| Sun Yicai, Fan Zhaoshu, Sun Xinyu, Ning Qiufeng. Relationship Between Geometric Effect Correction on Resistivity Measurement Methods[J]. Semiconductor Technology, 2000, 25(5): 38-41 |
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| Authors: | Sun Yicai Fan Zhaoshu Sun Xinyu Ning Qiufeng |
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| Abstract: | This paper puts forward an equivalence relation of the correction factors for the boundary effect, according to the relation of the thickness correction factors between two measurement methods of the bulk resistivity and sheet resistance for the specimens with a finite thickness. It has been confirmed through experiment, and can be used for the measurement with the four-point probe out of the center of the specimens. |
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| Keywords: | Resistivity measurement Four-point probe Geometric effect correction |
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