Growth of AgInSe2 thin films

Bulk AgInSe₂ was prepared by melting the constituent elements in stoichiometric pro proportions. Thin films were then grown from the bulk by a flash evaporation technique. X-ray diffraction studies were carried out on both the bulk material and the thin films. The data obtained were compared with data reported in the literature. The effect of the substrate temperature on the orientation of the films was also studied by electron diffraction. It was found that polycrystalline films of AgInSe₂ can be grown in the temperature range 150–250 °C.