Growth and electrical properties of AgGaS2 thin films |
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Authors: | H.v. Campe |
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Affiliation: | Physikalisches Institut, Johann Wolfgang Goethe-Universität, Robert-Mayer-Strasse 2-4, D-6000 Frankfurt am Main, F.R.G. |
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Abstract: | Polycrystalline and amorphous thin films of AgGaS2 were grown by flash evaporation for the first time. From a detailed investigation of the growthconditions it was possible to derive the first so-called structural phase diagram of a ternary chalcopyrite compound. In addition, the crystallization behaviour of amorphous films in a second heat treatment step was studied extensively. The crystal structures and chemical composition were analysed by X-ray diffraction, thermogravimetry and atomic absorption spectroscopy. The films were characterized by electrical and photo-electrical measurements. |
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