| 硅高压整流器件的中子辐照效应研究 |
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| 引用本文： | 周荷秀,路金印,吴有臣,李锐.硅高压整流器件的中子辐照效应研究[J].微电子学,1988(6). |
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| 作者姓名： | 周荷秀 路金印 吴有臣 李锐 |
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| 作者单位： | 河北半导体研究所
(周荷秀，路金印，吴有臣)，河北半导体研究所(李锐) |
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| 摘 要： | 本文概述了硅高压整流器件在中子辐照下的损伤机理。通过对器件的物理分析,指出器件在中子辐照下失效的主要原因是少子寿命的降低而导致W/2L的增大,从而使体电阻R_n增大。文章给出了提高器件抗中子辐照性能的设计思想及两种有效的手段,即提高器件的掺杂浓度和降低器件的高阻区宽度。文中还对比了几个加固与未加固器件的中子辐照结果。
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| 关 键 词： | 硅高压整流器件 中子辐照 失效机理 |
A Study of Neutron Radiation Effect for Si High Voltage Rectifying Diodes |
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| Zhou Hexiou,Lu Jinyin,Wu Youcheng and Li Rui.A Study of Neutron Radiation Effect for Si High Voltage Rectifying Diodes[J].Microelectronics,1988(6). |
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| Authors: | Zhou Hexiou Lu Jinyin Wu Youcheng and Li Rui |
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| Affiliation: | Hehei Semiconductor Research Institute |
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| Abstract: | The damage mechanism for Si high voltage rectifying devices irradiated by neutrons is described in this paper. It was indicated that the increase of the bulk resistance, Rn, resulted from the decrease of the lifetime of injection carriers was the main cause for the failure of neutron irradiated devices.
Design considerations for device hardening are given. It is believed that increasing doping concentration and reducing the high resistance region of the device are two effective methods for device hardening. And finally, experimental results for hardened and unhardened devices are presented and compared. |
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| Keywords: | Si high voltage rectifying device Neutron radiation effect failure mechanism |
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