| 10Gb/s EML Module Based on Identical Epitaxial Layer Scheme |
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| 引用本文： | Sun Changzheng,Xiong Bing,Wang Jian,Cai Pengfei,Tian Jianbo,Luo Yi,Liu Yu,Xie Liang,Zhang Jiabao,and Zhu Ninghua. 10Gb/s EML Module Based on Identical Epitaxial Layer Scheme[J]. 半导体学报, 2005, 26(4): 662-666 |
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| 作者姓名： | Sun Changzheng Xiong Bing Wang Jian Cai Pengfei Tian Jianbo Luo Yi Liu Yu Xie Liang Zhang Jiabao and Zhu Ninghua |
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| 作者单位： | 清华大学电子工程系集成光电子学联合国家重点实验室 北京100084(孙长征，熊兵，王健，蔡鹏飞，田建柏，罗毅)，中国科学院半导体研究所集成光电子学联合国家重点实验室 北京100083(刘宇，谢亮，张家宝)，中国科学院半导体研究所集成光电子学联合国家重点实验室 北京100083(祝宁华) |
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| 基金项目： | 国家自然科学基金 , 国家高技术研究发展计划(863计划) , 国家重点基础研究发展计划(973计划) |
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| 摘 要： | A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at －2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 1e－12 after transmission through 35km single mode fiber.
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| 关 键 词： | DFB lasers EA modulators photonic integrated circuit gain-coupling |
10Gb/s EML Module Based on Identical Epitaxial Layer Scheme |
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| Sun Changzheng,Xiong Bing,Wang Jian,Cai Pengfei,Tian Jianbo,Luo Yi,Liu Yu,XIE Liang,ZHANG JIABAO,ZHU Ninghua. 10Gb/s EML Module Based on Identical Epitaxial Layer Scheme[J]. Chinese Journal of Semiconductors, 2005, 26(4): 662-666 |
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| Authors: | Sun Changzheng Xiong Bing Wang Jian Cai Pengfei Tian Jianbo Luo Yi Liu Yu XIE Liang ZHANG JIABAO ZHU Ninghua |
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| Abstract: | A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10 -12 after transmission through 35km single mode fiber. |
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| Keywords: | DFB lasers EA modulators photonic integrated circuit gain-coupling |
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