Cr/SiO_2界面还原反应研究

利用俄歇电子能谱研究了Cr／SiO2薄膜在热处理过程中的界面扩散反应机理、界面反应动力学过程及界面反应产物。研究结果表明，Cr／SiO2体系的界面还原反应主要是Cr与SiO2的反应，其还原反应产物是CrSix和Cr2O3物种。界面还原反应的速度与反应时间的平方根成正比，其界面还原反应过程受Cr向SiO2层的扩散过程所控制，界面还原反应的表观活化能为72．5kJ／mol（约0．75eV）。

A STUDY ON INTERFACE REDUCTION OF Cr/SiO_2 FILM

The mechanism,kinetic and reaction species on the interface reduction of Cr/SiO2 film have been studied using AES. The results have shown that the retluctive reaction between Cr layer and SiO2 layer took place and the CrSix and Cr2O3 species were formed. The interface reduction was controlled by the diffusion of Cr into SiO2 layer. The formation rate of CrSix species is in proportion to the square root of reaction time. The apparent active energy of this interface reduction is 72.5 kJ/mol (about 0. 75 eV). The kinetic character of Cr/SiO2 interface reduction is similar to that of Ti/SiO2, system.