| 晶体管工作状态对SiGe带通滤波器的影响研究 |
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| 引用本文： | 李晶晶,熊瑛,杨保和,张维佳,申研.晶体管工作状态对SiGe带通滤波器的影响研究[J].半导体技术,2010,35(8):772-774. |
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| 作者姓名： | 李晶晶 熊瑛 杨保和 张维佳 申研 |
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| 作者单位： | 天津理工大学电子信息工程学院,天津市薄膜电子与通信器件重点实验室,天津,300384;天津晶研科技有限公司,天津,300384 |
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| 基金项目： | 国家自然基金，863目标导向类基金，天津市自然科学基金，天津市科技支撑计划重点项目 |
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| 摘 要： | 采用SiGe异质结双极晶体管,设计了一种具有回转结构的带通跨导-电容滤波器.使用ADS软件进行电路图的仿真分析.研究镜像电流源的集电极电阻R对该滤波器中心频率、输出增益及功耗的影响.分析结果表明,镜像电流源集电极电阻R的调节可以控制镜像电流源的晶体管工作状态和回转电路的偏置电流.因此,要获得更高的中心频率,镜像电流源中直接给跨导单元提供电流的晶体管不用按常规工作在放大区而可以工作在饱和区.对滤波器输出增益和功耗的进一步分析结果表明,以上晶体管工作在饱和区不仅可以提高滤波器的工作频率,还可以提高滤波器的输出增益,但是也会同时增加滤波器的功耗.
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| 关 键 词： | 锗硅异质结双极晶体管 跨导电容 滤波器 高频 回转器 |
Influence of Transistors Working Condition on SiGe Bandpass Filter |
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| Li Jingjing,Xiong Ying,Yang Baohe,Zhang Weijia,Shen Yan.Influence of Transistors Working Condition on SiGe Bandpass Filter[J].Semiconductor Technology,2010,35(8):772-774. |
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| Authors: | Li Jingjing Xiong Ying Yang Baohe Zhang Weijia Shen Yan |
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| Affiliation: | Li Jingjing1,Xiong Ying1,Yang Baohe1,Zhang Weijia2,Shen Yan2(1.Tianjin Key Laboratory of Film Electronic and Communication Device,School of Electronic Information Engineering,TianjinUniversity of Technology,Tianjin 300384,China,2.Tianjin Researchip and Technology Co.,Ltd.,China) |
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| Abstract: | The high frequency bandpass filter with gyrator structure based on SiGe HBT was designed.The circuit was simulated by ADS software.The influence of mirror current source resistance of collector on center frequency,output gain and power consumption was analyzed.The results show that the working condition of mirror current source transistor and the bias current of gyrator circuit can be controlled by the collector resistor R.Therefore,to obtain higher frequency,it is better for transistors which provide bias ... |
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| Keywords: | SiGe heterojunction bipolar transistor transconductance capacity filter high frequency gyrator |
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