| 高压SOI LDMOS设计新技术——电场调制及电荷对局域场的屏蔽效应在高压SOI LDMOS设计中的应用 |
| |
| 引用本文： | 段宝兴,张波,李肇基. 高压SOI LDMOS设计新技术——电场调制及电荷对局域场的屏蔽效应在高压SOI LDMOS设计中的应用[J]. 微电子学, 2007, 37(4): 459-465 |
| |
| 作者姓名： | 段宝兴 张波 李肇基 |
| |
| 作者单位： | 电子薄膜与集成器件国家重点实验室,成都,610054 |
| |
| 摘 要： | 针对SOI基LDMOS结构的特殊性，结合高压器件中击穿电压和比导通电阻的矛盾关系，以作者设计的几种新型横向高压器件为例，说明了利用电场调制和电荷对局域场的屏蔽效应来优化设计新型SOI LDMOS的新技术；同时，指出了这种新技术较传统设计方法的优缺点。
|
| 关 键 词： | 击穿电压 比导通电阻 电场调制 屏蔽效应 |
| 文章编号： | 1004-3365（2007）04-0459-07 |
| 修稿时间： | 2006-11-08 |
New Technology for High-Voltage SOI LDMOS——Application of electric field modulation and charge shielding effects to high-voltage SOI LDMOS |
| |
| DUAN Bao-xing,ZHANG Bo,LI Zhao-ji. New Technology for High-Voltage SOI LDMOS——Application of electric field modulation and charge shielding effects to high-voltage SOI LDMOS[J]. Microelectronics, 2007, 37(4): 459-465 |
| |
| Authors: | DUAN Bao-xing ZHANG Bo LI Zhao-ji |
| |
| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 610054, P. R. China |
| |
| Abstract: | In view of the particularity of SOI LDMOS, a new technology was developed, in which effects of the electric field modulation and charge shielding were utilized to design new types of SOI LDMOS. A number of typical lateral high-voltage devices were designed to further improve trade-off characteristics between breakdown voltage and specific on-resistance. Finally, advantages and disadvantages of this new technology are discussed, compared with the conventional methods. |
| |
| Keywords: | SOI LDMOS |
| 本文献已被 维普 万方数据 等数据库收录！ |
