Low-temperature plasma-enhanced chemical vapor deposition of tungsten and tungsten nitride

Tungsten and tungsten nitride layers have been deposited by plasma-enhanced chemical vapor deposition (PECVD). Tungsten layers deposited at low deposition temperatures T150 °C using this method showed good uniformity over dielectric and silicon substrate areas. As the deposition temperature decreased, the silicon consumed during the deposition reaction decreased, at T150 °C no silicon consumption was measurable. PECVD tungsten nitride layers were deposited directly on oxidized silicon substrates with no requirement for a nucleation layer. As the NH₃ flow rate was increased, whilst maintaining all other parameters constant, deposited layers were found to change from metal tungsten to tungsten-rich amorphous layer to W₂N. The resistivity of the layers was found to be high compared to published literature for higher-temperature deposited layers. The high resistivity is attributed to the incorporation of fluorine into the layer at low deposition temperatures. A deposition process was established for smooth amorphous tungsten-rich W _x N layers at 150 °C.