不同退火温度In掺杂ZnO薄膜的表面形貌和光学性质

用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和紫外-可见分光光度计观察4%(原子分数)In掺杂ZnO薄膜的微结构、表面形貌和光学性质.微结构分析表明:薄膜仍为六角纤锌矿结构,由于In杂质的掺入,使得薄膜结晶度劣化,退火温度对薄膜微结构影响较小;表面形貌观察结果显示:薄膜表面凹凸不平,450 ℃退火处理薄膜表面最平坦,尺寸在50～100 nm之间小颗粒致密、均匀地分布于起伏的表面;紫外可见透射谱研究结果表明:随着退火温度升高,薄膜光学带宽E_g由3.267 eV减小到3.197 eV,该结果可能与薄膜表面残余应力发生变化密切相关.

Effect of Annealing Temperature on Microstructure and Surface Topography of In-doped ZnO Thin Films

Microstructure,surface morphology and optical properties of ZnO thin film with 4at.% In doping concentration were measured by X-ray diffractometer,scanning electron microscope and UV-Vis spectrophotometer. Microstructure analysis shows that all films are polycrystalline and exhibit the hexagonal wurtzite structure. The crystallinity is deteriorated due to doping with indium. Intensity of the diffraction peaks almost has no change with annealing temperature increases. Surface morphology results indicate that...