1310-nm DBR-type MQW gain-clamped semiconductor optical amplifiers with AM-CATV-grade linearity |
| |
| Authors: | LF Tiemeijer GN van den Hoven PJA Thijs T van Dongen JJM Binsma EJ Jansen |
| |
| Affiliation: | Philips Optoelectron. Centre, Eindhoven, Netherlands; |
| |
| Abstract: | A 1310-nm gain clamped semiconductor optical amplifier with amplitude modulation CATV-grade linearity at an output power of 8 mW is demonstrated for the first time. The InGaAsP multiquantum-well laser amplifier is equipped with distributed Bragg reflectors at each end to supply the feedback necessary for gain clamping. The TE optical gain of 21.3 dB is measured to be constant within 0.1 dB up to 25-mW signal output power. Electrical signal distortion experiments are presented to demonstrate the linearity of the device. |
| |
| Keywords: | |
|
