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The properties of samarium doped ceria oxide thin films grown by e-beam deposition technique
Authors:Giedrius Laukaitis  Mindaugas Jauneika  Julius Dudonis  Oresta Katkauske  Darius Milcius
Affiliation:1. Physics Department, Kaunas University of Technology, Studentu str. 50, LT-51368 Kaunas, Lithuania;2. Center for Hydrogen Energy Technologies, Lithuanian Energy Institute, Breslaujos str. 3, LT-44403 Kaunas, Lithuania;1. Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento, Italy;2. Department of Civil and Mechanical Engineering and INSTM Research Unit, University of Cassino and Southern Lazio, Via G. Di Biasio 43, 03043 Cassino, FR, Italy;3. Department of Engineering, Parthenope University of Naples, Centro Direzionale, Is. C4, 80143 Napoli, Italy;4. INSTM – National Interuniversity Consortium of Materials Science and Technology, Via G. Giusti 9, 50121 Firenze, Italy;1. Department of Physics, Shivaji University, Kolhapur 416 004, India;2. Department of Physics, Rajaram College, Kolhapur 416 004, India
Abstract:One of the main challenges in today's solid oxide fuel cell (SOFC) technology is the reduction of their operating temperature. New types of oxygen ion conducting materials are currently under investigation to overcome the problems which SOFC faces at high temperatures. Samarium doped ceria oxide (SDC) was the material of investigation in this work. Optical quartz (SiO2) and Fe–Ni–Cr alloy (Alloy 600) were the two types of chosen substrates onto which SDC thin films were deposited by e-beam evaporation technique. The bias voltage was applied to the substrate during film growth. It had an influence on film formation, its microstructure and density because of the ionized particles presence in the SDC vapor stream. Changes in crystallite size and surface morphology were determined from X-ray diffraction data and scanning electron microscopy images. Influence of bias voltage on porosity of formed SDC thin films on optical quartz were calculated from transmittance spectra data by using Swanepoel method. The porosity decreases up to 12% by decreasing bias voltage from 0 to ?150 V.
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